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IRF7413PBF-1 PDF预览

IRF7413PBF-1

更新时间: 2024-11-06 01:19:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 233K
描述
Industry-standard pinout SO-8 Package

IRF7413PBF-1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
风险等级:5.27雪崩能效等级(Eas):260 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):58 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON

IRF7413PBF-1 数据手册

 浏览型号IRF7413PBF-1的Datasheet PDF文件第2页浏览型号IRF7413PBF-1的Datasheet PDF文件第3页浏览型号IRF7413PBF-1的Datasheet PDF文件第4页浏览型号IRF7413PBF-1的Datasheet PDF文件第5页浏览型号IRF7413PBF-1的Datasheet PDF文件第6页浏览型号IRF7413PBF-1的Datasheet PDF文件第7页 
IRF7413PbF-1  
HEXFET® Power MOSFET  
A
VDS  
30  
0.011  
52  
V
Ω
A
1
2
3
4
8
7
S
S
S
G
D
D
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
ID  
6
5
nC  
A
D
D
13  
(@TA = 25°C)  
SO-8  
Top View  
Features  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Benefits  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Form  
Tube/Bulk  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
95  
4000  
IRF7413PbF-1  
IRF7413TRPbF-1  
IRF7413PbF-1  
SO-8  
Tape and Reel  
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Max  
Units  
VDS  
30  
± 20  
13  
V
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
9.2  
58  
A
DM  
P
@TA = 25°C  
Power Dissipation  
2.5  
W
mW/°C  
mJ  
D
Linear Derating Factor  
Single Pulse Avalanche Energency  
0.02  
260  
E
AS  
V/ns  
°C  
dv/dt  
Peak Diode Recovery dv/dt  
5.0  
J, TSTG  
T
Junction and Storage Temperature Range  
-55 to +150  
Thermal Resistance Ratings  
Symbol  
Parameter  
Junction-to-Drain Lead  
Typ  
–––  
Max  
20  
Units  
RθJL  
RθJA  
°C/W  
Junction-to-Ambient  
–––  
50  
1
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November 19, 2013  

IRF7413PBF-1 替代型号

型号 品牌 替代类型 描述 数据表
IRF7413 INFINEON

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