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STS11NF30L PDF预览

STS11NF30L

更新时间: 2024-02-01 07:48:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS
页数 文件大小 规格书
6页 47K
描述
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

STS11NF30L 技术参数

是否Rohs认证: 符合生命周期:End Of Life
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:6.37
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.019 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):44 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STS11NF30L 数据手册

 浏览型号STS11NF30L的Datasheet PDF文件第2页浏览型号STS11NF30L的Datasheet PDF文件第3页浏览型号STS11NF30L的Datasheet PDF文件第4页浏览型号STS11NF30L的Datasheet PDF文件第5页浏览型号STS11NF30L的Datasheet PDF文件第6页 
STS11NF30L  
N-CHANNEL 30V - 0.009  
- 11A SO-8  
LOW GATE CHARGE STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STS11NF30L  
30 V  
< 0.012 Ω  
11 A  
TYPICAL RDS(on) = 0.014 @ 5V  
TYPICAL Qg = 19 nC @ 4.5V  
OPTIMAL RDS(on) x Qg TRADE-OFF  
CONDUCTION LOSSESREDUCED  
SWITCHING LOSSESREDUCED  
DESCRIPTION  
This application specific Power Mosfet is the third  
generation of STMicroelectronics unique ”Single  
Feature Size ” strip-based process. The resul-  
ting transistor shows the best trade-off between  
on-resistance and gate charge. When used as  
high and low side in buck regulators, it gives the  
best performance in termsof both conductionand  
switching losses. This is extremely important for  
motherboards where fast switching and high effi-  
ciency are of paramount importance.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLYDESIGNED AND  
OPTIMISED FOR HIGH EFFICIENCY CPU  
CORE DC/DC CONVERTERS FOR MOBILE  
PCs  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
V
VDGR  
VGS  
30  
± 20  
o
ID  
Drain Current (continuous) at Tc = 25 C  
11  
7
A
A
o
Drain Current (continuous) at Tc = 100 C  
IDM( )  
Drain Current (pulsed)  
44  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
2.5  
W
() Pulse width limited by safe operating area  
1/6  
April 2000  

STS11NF30L 替代型号

型号 品牌 替代类型 描述 数据表
STS17NF3LL STMICROELECTRONICS

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