Datasheet > STS12NH3LL_06

STS12NH3LL_06

更新时间： 2024-11-20 03:30:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
12页	294K
描述
N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET

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STS12NH3LL_06 数据手册

STS12NH3LL

N-channel 30V - 0.008Ω - 12A - SO-8

Ultra low gate charge STripFET™ Power MOSFET

General features

Type

DSS

DS(on)

STS12NH3LL

30V

<0.0105Ω

12A

■ Optimal R

x Qg trade-off @ 4.5V

DS(on)

■ Switching losses reduced

■ Low input capacitance

■ Low threshold device

SO-8

Description

This series is based on the latest generation of

ST’s proprietary “STripFET™” technology. An

innovative layout enables the device to also

exhibit extremely low gate charge for the most

demanding requirements as high-side switch in

high-frequency DC-DC converters. It’s therefore

ideal for high-density converters in Telecom and

Computer applications.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STS12NH3LL

S12NH3LL

SO-8

Tape & reel

March 2006

Rev 6

1/12

www.st.com

12 3 4 5 6 7...12

中文翻译

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