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STS15N4LLF5 PDF预览

STS15N4LLF5

更新时间: 2024-11-24 15:53:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 571K
描述
15A, 40V, 0.0083ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8

STS15N4LLF5 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82Is Samacsys:N
雪崩能效等级(Eas):1090 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.0083 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):63.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STS15N4LLF5 数据手册

 浏览型号STS15N4LLF5的Datasheet PDF文件第2页浏览型号STS15N4LLF5的Datasheet PDF文件第3页浏览型号STS15N4LLF5的Datasheet PDF文件第4页浏览型号STS15N4LLF5的Datasheet PDF文件第5页浏览型号STS15N4LLF5的Datasheet PDF文件第6页浏览型号STS15N4LLF5的Datasheet PDF文件第7页 
STS15N4LLF5  
N-channel 40 V, 0.00625 , 15 A, SO-8  
STripFET™ Power MOSFET  
Features  
Type  
VDSS  
RDS(on) max.  
ID  
STS15N4LLF5  
40 V  
< 0.0076 Ω  
15 A  
Optimal R  
x Q trade-off @ 4.5 V  
g
DS(on)  
Conduction losses reduced  
Switching losses reduced  
SO
Applications  
Switching application  
Description  
Figure 1.  
Internal schematic diagram  
This STripFET™V Power MOSFET technology is  
among the latest improvements, which have been  
especially tailored to achieve very low on-state  
resistance providing also one of the best-in-class  
figure of merit (FOM).  
Table 1.  
Order code  
STS15N4LLF5  
Device summary  
Marking  
Package  
SO-8  
Packaging  
15C4L  
Tape and reel  
April 2010  
Doc ID 17339 Rev 1  
1/12  
www.st.com  
12  

STS15N4LLF5 替代型号

型号 品牌 替代类型 描述 数据表
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