是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | Is Samacsys: | N |
雪崩能效等级(Eas): | 1090 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 15 A |
最大漏极电流 (ID): | 15 A | 最大漏源导通电阻: | 0.0083 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3 W |
最大脉冲漏极电流 (IDM): | 63.6 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STL80N3LLH6 | STMICROELECTRONICS |
功能相似 |
21A, 30V, 0.0076ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 | |
STL60N32N3LL | STMICROELECTRONICS |
功能相似 |
Dual N-channel 30 V, 0.005 Ohm, 15 A PowerFLAT(TM) 5x6 asymmetrical double island, STripFE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STS17NF3LL | STMICROELECTRONICS |
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N-CHANNEL 30V - 0.0045 ohm - 17A SO-8 STripFE | |
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N-channel 30V - 0.0045ohm - 17A - SO-8 STripFET II Power MOSFET for DC-DC conversion | |
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N-channel 30V - 0.004OHM - 17A - SO-8 STripFET Power MOSFET for DC-DC conversion | |
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N-channel 30V - 0.004ohm - 17A - SO-8 STripFET Power MOSFET for DC-DC conversion | |
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N-channel 30 V - 0.004 Ω - 17 A - SO-8 STripF | |
STS1979 | AUK |
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PNP Silicon Transistor | |
STS1979N | AUK |
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PNP Silicon Transistor | |
STS1979N | KODENSHI |
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Transistor, | |
STS1980 | AUK |
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PNP Silicon Transistor | |
STS1980N | AUK |
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PNP Silicon Transistor |