STS14N3LLH5

更新时间： 2024-11-24 06:14:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	420K
描述
N-channel 30 V, 0.005 Ω, 14 A - SO-8 STripFET™ V Power MOSFET

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替代型号

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STS14N3LLH5 数据手册

STS14N3LLH5

N-channel 30 V, 0.005 Ω, 14 A - SO-8

STripFET™ V Power MOSFET

Features

Type

V_DSS

R_DS(on)

I_D

STS14N3LLH5

30 V

<0.006 Ω 14 A ⁽¹⁾

1. The value is rated according R_thj-pcb

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

DS(on)

SO-8

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This product utilizes the 5 generation of design

rules of ST’s proprietary STripFET™ technology.

The lowest available R

*Q , in SO-8

DS(on)

package, makes this device suitable for the most

demanding DC-DC converter applications, where

high power density is to be achieved.

Table 1.

Order code

STS14N3LLH5

Device summary

Marking

Package

SO-8

Packaging

14D3L

Tape and reel

September 2008

Rev 3

1/12

www.st.com

12 3 4 5 6 7...12

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STS14N3LLH5 替代型号

型号	品牌	替代类型	描述	数据表
STS11NF30L	STMICROELECTRONICS	类似代替	N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET
IRF7821TRPBF	INFINEON	功能相似	HEXFETPower MOSFET
IRF7413TRPBF	INFINEON	功能相似	fast suitching

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