Datasheet > STS12NH3LL_07

STS12NH3LL_07

更新时间： 2024-01-11 08:31:45

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
13页	317K
描述
N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET™ Power MOSFET

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STS12NH3LL_07 数据手册

STS12NH3LL

N-channel 30 V - 0.008 Ω - 12 A - SO-8

ultra low gate charge STripFET™ Power MOSFET

Features

Type

V_DSS

R_DS(on)

I_D

STS12NH3LL

30 V

<0.0105 Ω

12 A

■ Optimal R

x Qg trade-off @ 4.5 V

DS(on)

■ Switching losses reduced

■ Low input capacitance

■ Low threshold device

SO-8

Application

■ Switching applications

Description

Figure 1.

Internal schematic diagram

This series is based on the latest generation of

ST’s proprietary “STripFET™” technology. An

innovative layout enables the device to also

exhibit extremely low gate charge for the most

demanding requirements as high-side switch in

high-frequency DC-DC converters. It’s therefore

ideal for high-density converters in telecom and

computer applications.

Table 1.

Order code

STS12NH3LL

Device summary

Marking

Packag

SO-8

Packaging

12H3LL

Tape & reel

November 2007

Rev 9

1/13

www.st.com

12 3 4 5 6 7...13

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