5秒后页面跳转
STS11NF3LL PDF预览

STS11NF3LL

更新时间: 2024-11-19 22:10:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
6页 47K
描述
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

STS11NF3LL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.89
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.013 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):44 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STS11NF3LL 数据手册

 浏览型号STS11NF3LL的Datasheet PDF文件第2页浏览型号STS11NF3LL的Datasheet PDF文件第3页浏览型号STS11NF3LL的Datasheet PDF文件第4页浏览型号STS11NF3LL的Datasheet PDF文件第5页浏览型号STS11NF3LL的Datasheet PDF文件第6页 
STS11NF3LL  
N-CHANNEL 30V - 0.009  
- 11A SO-8  
LOW GATE CHARGE STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STS11NF3LL  
30 V  
< 0.011 Ω  
11 A  
TYPICAL RDS(on) = 0.011 @ 4.5V  
OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V  
CONDUCTION LOSSESREDUCED  
SWITCHING LOSSESREDUCED  
DESCRIPTION  
This application specific Power Mosfet is the third  
generation of STMicroelectronics unique ”Single  
Feature Size ” strip-based process. The resul-  
ting transistor shows the best trade-off between  
on-resistance and gate charge. When used as  
high and low side in buck regulators, it gives the  
best performance in termsof both conductionand  
switching losses. This is extremely important for  
motherboards where fast switching and high effi-  
ciency are of paramount importance.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLYDESIGNED AND  
OPTIMISED FOR HIGH EFFICIENCY CPU  
CORE DC/DC CONVERTERS FOR MOBILE  
PCs  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
V
VDGR  
VGS  
30  
± 15  
o
ID  
Drain Current (continuous) at Tc = 25 C  
11  
7
A
A
o
Drain Current (continuous) at Tc = 100 C  
IDM( )  
Drain Current (pulsed)  
44  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
2.5  
W
() Pulse width limited by safe operating area  
1/6  
May 2000  

与STS11NF3LL相关器件

型号 品牌 获取价格 描述 数据表
STS123 AUK

获取价格

NPN Silicon Transistor
STS12CFRM ETC

获取价格

Telecomm/Datacomm
STS12NF30L STMICROELECTRONICS

获取价格

N - CHANNEL 30V - 0.0085W - 12A SO-8 STripFET POWER MOSFET
STS12NF30L_07 STMICROELECTRONICS

获取价格

N-channel 30V - 0.008ohm - 12A SO-8 STripFET II Power MOSFET
STS12NF30L_0705 STMICROELECTRONICS

获取价格

N-channel 30V - 0.008Ω - 12A SO-8 STripFET™ I
STS12NH3LL STMICROELECTRONICS

获取价格

N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LO
STS12NH3LL_06 STMICROELECTRONICS

获取价格

N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET
STS12NH3LL_07 STMICROELECTRONICS

获取价格

N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra
STS131PC ETC

获取价格

SCHIEBESCHALTER 1POL SP3T EIN EIN EIN
STS14N3LLH5 STMICROELECTRONICS

获取价格

N-channel 30 V, 0.005 Ω, 14 A - SO-8 STripFET