Datasheet > STS12NF30L

STS12NF30L

更新时间： 2024-09-27 22:12:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	85K
描述
N - CHANNEL 30V - 0.0085W - 12A SO-8 STripFET POWER MOSFET

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STS12NF30L 数据手册

STS12NF30L

N - CHANNEL 30V - 0.0085Ω - 12A SO-8

STripFET POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STS12NF30L

30 V

< 0.01 Ω

12 A

■

TYPICAL R_DS(on)= 0.0085 Ω

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

LOW THRESHOLD DRIVE

■

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique ” Single Feature

Size

” strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

SO-8

therefore

remarkable

manufacturing

reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC MOTOR DRIVE

DC-DC CONVERTERS

BATTERY MANAGMENT IN NOMADIC

EQUIPMENT

■

POWER MANAGEMENT IN

PORTABLE/DESKTOPPC_s

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

V_DGR

V_GS

± 20

I_D

Drain Current (continuous) at Tc = 25 C

7.5

Drain Current (continuous) at T_c= 100 C

I_DM(• )

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

2.5

•

( ) Pulse width limited by safe operating area

1/8

May 1999

12 3 4 5 6 7 8

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