Datasheet > STS11NF30L_07

STS11NF30L_07

更新时间： 2024-11-20 08:58:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
12页	333K
描述
N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET? II Power MOSFET

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STS11NF30L_07 数据手册

STS11NF30L

N-channel 30V - 0.0085Ω - 11A SO-8

Low gate charge STripFET™ II Power MOSFET

General features

Type

V_DSS

30V

R_DS(on)

I_D

STS11NF30L

<0.009Ω

11A

■ Optimal R (on) x Qg trade-off

■ Conduction losses reduced

S0-8

Description

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

Internal schematic diagram

remarkable manufacturing reproducibility.

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STS11NF30L

11F30L-

SO-8

Tape & reel

January 2007

Rev 11

1/12

www.st.com

12 3 4 5 6 7...12

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