Datasheet > IRF7413TR

IRF7413TR

更新时间： 2024-11-26 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	421K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:13A;Vgs(th)(V):±20;漏源导通电阻:12mΩ@10V;漏源导通电阻:17mΩ@4.5V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7413TR 数据手册

UMW

IRF7413

Application

Generation VTechnology

Ultra Low On-Resistance

N-Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

100% Rg Tested

Lead-Free

Top View

Features

VDS (V) = 30V

RDS(ON)

12m

17m

(VGS = 10V)

(VGS = 4.5V)

Absolute Maximum Ratings

mbol

Parameter

Drain-to-Source Volta

Gate-to-Source Volta

Max

Units

V_DS

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

9.2

sed Dra

Power Dissipation

Linear Derating Factor

in Current

@T_A= 25°C

2.5

mW/°C

0.02

260

Si gl se va anche Energency

V/ns

°C

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

_J,T_STG

-55 to +150

Thermal Resistance Ratings

mbol

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

–––

Max

Units

R_θJL

R_θJA

°C/W

–––

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF7413TR相关器件

型号	品牌	获取价格	描述	数据表
IRF7413TRPBF	INFINEON	获取价格	fast suitching
IRF7413TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET,
IRF7413Z	INFINEON	获取价格	HEXFET Power MOSFET
IRF7413ZGPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRF7413ZPBF	INFINEON	获取价格	Control FET for Notebool Processor Power, Control and Synchronous Rectifier
IRF7413ZTR	INFINEON	获取价格	Control FET for Notebook Processor Power
IRF7413ZTRPBF	INFINEON	获取价格	Control FET for Notebook Processor Power
IRF7413ZUPBF	INFINEON	获取价格	HEXFT Power MOSFET
IRF7413ZUTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRF7416	INFINEON	获取价格	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)