Datasheet > IRF7413TR

IRF7413TR

更新时间： 2024-10-15 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	421K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:13A;Vgs(th)(V):±20;漏源导通电阻:12mΩ@10V;漏源导通电阻:17mΩ@4.5V

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数据手册

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IRF7413TR 数据手册

UMW

IRF7413

Application

Generation VTechnology

Ultra Low On-Resistance

N-Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

100% Rg Tested

Lead-Free

Top View

Features

VDS (V) = 30V

RDS(ON)

12m

17m

(VGS = 10V)

(VGS = 4.5V)

Absolute Maximum Ratings

mbol

Parameter

Drain-to-Source Volta

Gate-to-Source Volta

Max

Units

V_DS

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

9.2

sed Dra

Power Dissipation

Linear Derating Factor

in Current

@T_A= 25°C

2.5

mW/°C

0.02

260

Si gl se va anche Energency

V/ns

°C

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

_J,T_STG

-55 to +150

Thermal Resistance Ratings

mbol

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

–––

Max

Units

R_θJL

R_θJA

°C/W

–––

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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