Datasheet > IRF7413GPBF

IRF7413GPBF

更新时间： 2024-11-07 01:15:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	264K
描述
Ultra Low On-Resistance

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中文翻译

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数据手册

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IRF7413GPBF 数据手册

PD - 96250

IRF7413GPbF

HEXFET^®Power MOSFET

l GenerationVTechnology

l Ultra Low On-Resistance

l N-ChannelMosfet

l SurfaceMount

l AvailableinTape&Reel

l Dynamicdv/dtRating

l Fast Switching

l 100% R_GTested

l Lead-Free

l Halogen-Free

V_DSS= 30V

R_DS(on)= 0.011Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques. Power dissipation

of greater than 0.8W is possible in a typical PCB mount

application.

SO-8

Absolute Maximum Ratings

Symbol

Parameter

Drain-to-Source Voltage

Max

Units

V_DS

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

9.2

@T_A= 25°C

Power Dissipation

2.5

mW/°C

Linear Derating Factor

Single Pulse Avalanche Energency

0.02

260

V/ns

°C

dv/dt

Peak Diode Recovery dv/dt

5.0

_J,T_STG

Junction and Storage Temperature Range

-55 to +150

Thermal Resistance Ratings

Symbol

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ

–––

Max

Units

R_θJL

R_θJA

°C/W

–––

www.irf.com

07/10/09

12 3 4 5 6 7...9

中文翻译

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