IRF654A

更新时间： 2024-11-27 04:23:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	238K
描述
Advanced Power MOSFET

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中文翻译

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IRF654A 数据手册

IRF654A

Advanced Power MOSFET

FEATURES

BV_DSS= 250 V

R_DS(on)= 0.14 Ω

I_D= 21 A

♦ Avalanche Rugged Technology

♦ Rugged Gate Oxide Technology

♦ Lower Input Capacitance

♦ Improved Gate Charge

♦ Extended Safe Operating Area

♦ Lower Leakage Current : 10 µA (Max.) @ V_DS= 250V

♦ Low R_DS(ON): 0.108 Ω (Typ.)

TO-220

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

250

Units

V_DSS

Continuous Drain Current (T_C=25°C)

Continuous Drain Current (T_C=100°C)

Drain Current-Pulsed

I_D

13.3

(1)

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±30

551

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25°C)

Linear Derating Factor

15.6

4.8

V/ns

156

1.25

P_D

T_J, T_STG

T_L

W/°C

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

°C

Purposes, 1/8” from case for 5-seconds

Thermal Resistance

Symbol

R_θJC

Characteristic

Junction-to-Case

Case-to-Sink

Typ.

Max.

0.8

Units

0.5

R_θCS

°C/W

R_θJA

Junction-to-Ambient

62.5

12 3 4 5 6 7

中文翻译

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