5秒后页面跳转
捷配首页

Datasheet > IRF6609TR1
IRF6609TR1 PDF预览

IRF6609TR1

更新时间： 2024-01-10 00:08:30
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 196K
描述
Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

阅读下载

中文翻译

获取价格

IRF6609TR1 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：ROHS COMPLIANT, ISOMETRIC-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.29
其他特性：LOW CONDUCTION LOSS雪崩能效等级（Eas）：240 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：31 A
最大漏源导通电阻：0.002 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e4
湿度敏感等级：3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：250 A认证状态：Not Qualified
表面贴装：YES端子面层：Silver/Nickel (Ag/Ni)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON

IRF6609TR1 数据手册

 浏览型号IRF6609TR1的Datasheet PDF文件第2页浏览型号IRF6609TR1的Datasheet PDF文件第3页浏览型号IRF6609TR1的Datasheet PDF文件第4页浏览型号IRF6609TR1的Datasheet PDF文件第5页浏览型号IRF6609TR1的Datasheet PDF文件第6页浏览型号IRF6609TR1的Datasheet PDF文件第7页 
PD - 95822  
IRF6609  
HEXFET® Power MOSFET  
VDSS  
20V  
RDS(on) max  
2.0mΩ@VGS = 10V  
Qg  
46nC  
l Low Conduction Losses  
l Low Switching Losses  
2.6mΩ@VGS = 4.5V  
l Ideal Synchronous Rectifier MOSFET  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Compatible with existing Surface Mount  
Techniques  
DirectFET™ISOMETRIC  
MT  
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)  
SQ SX ST MQ MX MT  
Description  
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package  
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation  
of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers  
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
20  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
±20  
150  
31  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TC = 25°C  
D
D
D
@ TA = 25°C  
@ TA = 70°C  
A
25  
250  
2.8  
1.8  
89  
DM  
Power Dissipation  
P
P
P
@TA = 25°C  
@TA = 70°C  
@TC = 25°C  
D
D
D
Power Dissipation  
W
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.022  
-40 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Junction-to-Ambient  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
RθJA  
RθJA  
–––  
–––  
1.4  
Junction-to-Ambient  
Junction-to-Case  
RθJA  
°C/W  
RθJC  
–––  
1.0  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through ˆare on page 10  
www.irf.com  
1
2/13/04  
1234567...10

中文翻译

下载PDF

与IRF6609TR1相关器件

型号 品牌 获取价格 描述 数据表
IRF6609TR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TRPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6610 INFINEON

获取价格

 		HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
IRF6610TR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Me
IRF6610TRPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Me
IRF6611 INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6611PBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6611TRPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 32A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Me
IRF6612 INFINEON

获取价格

 		HEXFET Power MOSFET
IRF66121PBF INFINEON

获取价格

 		RoHs Compliant

与IRF6609TR1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证