5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRF6611
IRF6611 PDF预览

IRF6611

更新时间： 2024-02-27 04:23:50
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 246K
描述
DirectFET Power MOSFET

阅读下载

中文翻译

获取价格

IRF6611 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.35
雪崩能效等级（Eas）：310 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：32 A最大漏源导通电阻：0.0026 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：220 A认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6611 数据手册

 浏览型号IRF6611的Datasheet PDF文件第2页浏览型号IRF6611的Datasheet PDF文件第3页浏览型号IRF6611的Datasheet PDF文件第4页浏览型号IRF6611的Datasheet PDF文件第5页浏览型号IRF6611的Datasheet PDF文件第6页浏览型号IRF6611的Datasheet PDF文件第7页 
PD - 96978A  
IRF6611  
DirectFET™ Power MOSFET ꢀ  
Typical values (unless otherwise specified)  
ꢂLow Profile (<0.7 mm)  
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
2.0mΩ@ 10V 2.6mΩ@ 4.5V  
RDS(on)  
ꢂDual Sided Cooling Compatible ꢁ  
ꢂUltra Low Package Inductance  
Qg tot Qgd  
Qgs2  
3.3nC  
Qrr  
16nC  
Qoss Vgs(th)  
ꢂOptimized for High Frequency Switching above 1MHz ꢁ  
ꢂIdeal for CPU Core DC-DC Converters  
ꢂOptimized for SyncFET Socket of Sync. Buck Converterꢁ  
ꢂLow Conduction Losses  
37nC  
12nC  
23nC  
1.7V  
ꢂCompatible with Existing Surface Mount Techniques ꢁ  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ꢁ  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest  
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing  
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
bus converters including RDS(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low RDS(on) and high Cdv/  
dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
27  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V ꢅ  
Continuous Drain Current, VGS @ 10V ꢅ  
Continuous Drain Current, VGS @ 10V ꢆ  
Pulsed Drain Current ꢃ  
I
I
I
I
@ TA = 25°C  
D
D
D
22  
@ TA = 70°C  
@ TC = 25°C  
A
150  
220  
210  
22  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy ꢄ  
mJ  
A
Avalanche Current  
ꢃ
20  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 22A  
I
= 27A  
D
D
V
= 24V  
DS  
DS  
V
= 15V  
T
J
= 125°C  
T
2
= 25°C  
J
0
0
1
3
4
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Gate Voltage  
Notes:  
ꢁClick on this section to link to the appropriate technical paper.  
ꢀClick on this section to link to the DirectFET MOSFETs  
ꢃRepetitive rating; pulse width limited by max. junction temperature.  
ꢄStarting TJ = 25°C, L = 0.91mH, RG = 25Ω, IAS = 22A.  
ꢅSurface mounted on 1 in. square Cu board, steady state.  
ꢆTC measured with thermocouple mounted to top (Drain) of part.  
www.irf.com  
1
04/18/05  
1234567...9

中文翻译

下载PDF

与IRF6611相关器件

型号 品牌 获取价格 描述 数据表
IRF6611PBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6611TRPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 32A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Me
IRF6612 INFINEON

获取价格

 		HEXFET Power MOSFET
IRF66121PBF INFINEON

获取价格

 		RoHs Compliant
IRF6612PBF INFINEON

获取价格

 		RoHs Compliant
IRF6612PBF_15 INFINEON

获取价格

 		Ideal for CPU Core DC-DC Converters
IRF6612TR1 INFINEON

获取价格

 		HEXFET Power MOSFET
IRF6612TR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me
IRF6612TRPBF INFINEON

获取价格

 		RoHs Compliant
IRF6613 INFINEON

获取价格

 		HEXFET Power MOSFET

与IRF6611相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证