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IRF6616PBF_15

更新时间： 2024-09-29 01:15:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 282K
描述
RoHS compliant containing no lead or bormide

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IRF6616PBF_15 数据手册

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PD - 96100  
IRF6616PbF  
IRF6616TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS compliant containing no lead or bormide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
40V max ±20V max  
3.7mΩ@ 10V 4.6mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l Lead-Free  
29nC  
9.4nC 2.4nC  
33nC  
15nC  
1.8V  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
MX  
SQ  
SX  
ST  
MQ  
MT  
MP  
Description  
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low  
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package  
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET  
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be  
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.  
Absolute Maximum Ratings  
Max.  
40  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
19  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
15  
A
@ TA = 70°C  
@ TC = 25°C  
106  
150  
36  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
15  
6
5
4
3
2
1
0
12  
10  
8.0  
6.0  
4.0  
2.0  
0
I
= 15A  
D
I
= 19A  
D
V
= 32V  
DS  
VDS= 20V  
T
= 125°C  
J
T
= 25°C  
8.0  
J
0
10  
20  
30  
40  
2.0  
4.0  
6.0  
10.0  
Q
Total Gate Charge (nC)  
V
, Gate-to-Source Voltage (V)  
G
GS  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS =15A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
05/23/07  
1234567...10

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