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IRF6618TR1PBF PDF预览

IRF6618TR1PBF

更新时间： 2024-01-21 11:55:37
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 250K
描述
Lead-Free (Qualified up to 260°C Reflow)

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中文翻译

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IRF6618TR1PBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：ISOMETRIC-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：7.63
Is Samacsys：N雪崩能效等级（Eas）：210 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：29 A
最大漏极电流 (ID)：30 A最大漏源导通电阻：0.0022 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
JESD-609代码：e4湿度敏感等级：3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：89 W
最大脉冲漏极电流 (IDM)：240 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Silver/Nickel (Ag/Ni)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6618TR1PBF 数据手册

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PD - 97240A  
IRF6618PbF  
IRF6618TRPbF  
l RoHs Compliant   
DirectFET™ Power MOSFET ‚  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
2.2mΩ@ 10V 3.4mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l High Cdv/dt Immunity  
43nC  
15nC  
4.0nC  
46nC  
28nC  
1.64V  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ISOMETRIC  
MT  
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details)  
MT  
SQ  
SX  
ST  
MQ  
MX  
Description  
The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to  
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC  
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for  
parameters that are critical in synchronous buck converter’s SyncFET sockets.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
±20  
170  
30  
GS  
I
I
I
I
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
D
@ TA = 25°C  
@ TA = 70°C  
A
24  
240  
210  
24  
DM  
EAS  
IAR  
mJ  
A
Single Pulse Avalanche Energy  
Avalanche Current  
6
5
4
3
2
1
0
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
= 30A  
I = 24A  
D
D
V
= 24V  
= 15V  
DS  
V
DS  
T
= 125°C  
J
T
= 25°C  
6
J
2
3
4
5
7
8
9
10  
0
10  
20  
30  
40  
50  
60  
V
Gate -to -Source Voltage (V)  
Q
Total Gate Charge (nC)  
GS,  
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage  
G
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 24A.  
1
www.irf.com  
08/17/07  
1234567...9

中文翻译

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IRF6618TR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6618TRPBF INFINEON

类似代替

 DirectFET?Power MOSFET ?

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