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IRF6626TR1PBF PDF预览

IRF6626TR1PBF

更新时间： 2024-02-27 22:37:06
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 289K
描述
RoHs Compliant

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IRF6626TR1PBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：CHIP CARRIER, R-XBCC-N3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.35
Is Samacsys：N雪崩能效等级（Eas）：24 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.0054 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e4
湿度敏感等级：3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：130 A认证状态：Not Qualified
表面贴装：YES端子面层：Silver/Nickel (Ag/Ni)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6626TR1PBF 数据手册

 浏览型号IRF6626TR1PBF的Datasheet PDF文件第2页浏览型号IRF6626TR1PBF的Datasheet PDF文件第3页浏览型号IRF6626TR1PBF的Datasheet PDF文件第4页浏览型号IRF6626TR1PBF的Datasheet PDF文件第5页浏览型号IRF6626TR1PBF的Datasheet PDF文件第6页浏览型号IRF6626TR1PBF的Datasheet PDF文件第7页 
PD - 97218  
IRF6626PbF  
IRF6626TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant   
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
4.0mΩ@ 10V 5.2mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
19nC  
6.7nC 1.6nC 5.4nC  
13nC  
1.8V  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
ST  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6626PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6626PbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
16  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
13  
@ TA = 70°C  
@ TC = 25°C  
A
72  
130  
24  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 13A  
I
= 16A  
D
D
V
V
= 24V  
DS  
= 15V  
DS  
T
= 125°C  
J
T
= 25°C  
5
J
0
3
4
6
7
8
0
10  
20  
30  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Gate Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 13A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
05/29/06  
1234567...10

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