是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-XDSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
雪崩能效等级(Eas): | 31 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.0077 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XDSO-G2 |
JESD-609代码: | e4 | 湿度敏感等级: | 3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 110 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Silver/Nickel (Ag/Ni) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6637TR1 | INFINEON |
获取价格 |
DirectFETPower MOSFET |
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IRF6637TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Me |
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IRF6637TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Me |
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IRF6638PBF | INFINEON |
获取价格 |
DirectFET Power MOSFET |
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IRF6638TRPBF | INFINEON |
获取价格 |
DirectFET Power MOSFET |
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IRF6641PBF | INFINEON |
获取价格 |
Latest MOSFET silicon technology |
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IRF6641PBF_15 | INFINEON |
获取价格 |
Latest MOSFET silicon technology |
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IRF6641TR1PBF | INFINEON |
获取价格 |
DirectFET TM MOSFET |
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IRF6641TRPBF | INFINEON |
获取价格 |
DirectFET TM Power MOSFET |
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IRF6641TRPBF_07 | INFINEON |
获取价格 |
DirectFET TM Power MOSFET |
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