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IRF6641TRPBF_07

更新时间： 2024-02-16 02:32:23
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英飞凌 - INFINEON /
页数 文件大小 规格书
9页 245K
描述
DirectFET TM Power MOSFET

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IRF6641TRPBF_07 数据手册

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PD - 97262A  
IRF6641TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
VDSS  
200V max ±20V max  
VGS  
RDS(on)  
51mΩ@ 10V  
Vgs(th)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
Qg tot  
Qgd  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
34nC  
9.5nC  
4.0V  
l Optimized for Synchronous Rectification  
l Low Conduction Losses  
l High Cdv/dt Immunity  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
MZ  
SH  
SJ  
SP  
MN  
Description  
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging  
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods  
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving  
previous best thermal resistance by 80%.  
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-  
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance  
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal  
for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
200  
±20  
4.6  
3.7  
26  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
37  
DM  
EAS  
IAR  
46  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
11  
12.0  
10.0  
8.0  
200  
180  
160  
140  
120  
100  
80  
I
= 5.5A  
I
= 5.5A  
D
D
V
V
V
= 160V  
= 100V  
= 40V  
DS  
DS  
DS  
T
= 125°C  
= 25°C  
J
6.0  
4.0  
T
J
60  
40  
2.0  
20  
0.0  
0
0
5
10  
15  
20  
25  
30  
35  
40  
4
6
8
10  
12  
14  
16  
Q
,
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 11A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
11/14/07  
1234567...9

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