PD - 97262A
IRF6641TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant
VDSS
200V max ±20V max
VGS
RDS(on)
51mΩ@ 10V
Vgs(th)
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
Qg tot
Qgd
l Ideal for High Performance Isolated Converter
Primary Switch Socket
34nC
9.5nC
4.0V
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MZ
SH
SJ
SP
MN
Description
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal
for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
200
±20
4.6
3.7
26
Parameter
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
A
37
DM
EAS
IAR
46
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
11
12.0
10.0
8.0
200
180
160
140
120
100
80
I
= 5.5A
I
= 5.5A
D
D
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
T
= 125°C
= 25°C
J
6.0
4.0
T
J
60
40
2.0
20
0.0
0
0
5
10
15
20
25
30
35
40
4
6
8
10
12
14
16
Q
,
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 11A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
11/14/07