PD - 96908E
IRF6644
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
10.3mΩ@ 10V
Vgs(th)
100V max ±20V max
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
Qg tot
Qgd
l Optimized for High Frequency Switching
35nC
11.5nC
3.7V
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
100
±20
10.3
8.3
Parameter
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
A
60
82
DM
EAS
IAR
220
6.2
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
13
12
11
10
9
0.08
0.06
0.04
0.02
0.00
T = 25°C
A
I
= 6.2A
D
V
V
= 7.0V
GS
= 8.0V
= 10V
GS
V
T
= 125°C
GS
J
T
= 25°C
10
V
= 15V
GS
J
0
4
8
12
16
20
4
6
8
12
14
16
V
, Gate-to-Source Voltage (V)
GS
I , Drain Current (A)
D
Fig 1. Typical On-Resistance Vs. Gate Voltage
Fig 2. Typical On-Resistance Vs. Drain Current
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
6/30/05