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IRF6644TR1

更新时间： 2024-02-07 23:47:37
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 250K
描述
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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IRF6644TR1 数据手册

 浏览型号IRF6644TR1的Datasheet PDF文件第2页浏览型号IRF6644TR1的Datasheet PDF文件第3页浏览型号IRF6644TR1的Datasheet PDF文件第4页浏览型号IRF6644TR1的Datasheet PDF文件第5页浏览型号IRF6644TR1的Datasheet PDF文件第6页浏览型号IRF6644TR1的Datasheet PDF文件第7页 
PD - 96908E  
IRF6644  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
10.3mΩ@ 10V  
Vgs(th)  
100V max ±20V max  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot  
Qgd  
l Optimized for High Frequency Switching   
35nC  
11.5nC  
3.7V  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
l Low Conduction Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MN  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SH  
SJ  
SP  
MZ  
MN  
Description  
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications  
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled  
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,  
and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
10.3  
8.3  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
60  
82  
DM  
EAS  
IAR  
220  
6.2  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13  
12  
11  
10  
9
0.08  
0.06  
0.04  
0.02  
0.00  
T = 25°C  
A
I
= 6.2A  
D
V
V
= 7.0V  
GS  
= 8.0V  
= 10V  
GS  
V
T
= 125°C  
GS  
J
T
= 25°C  
10  
V
= 15V  
GS  
J
0
4
8
12  
16  
20  
4
6
8
12  
14  
16  
V
, Gate-to-Source Voltage (V)  
GS  
I , Drain Current (A)  
D
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical On-Resistance Vs. Drain Current  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
6/30/05  
1234567...9

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