生命周期: | Active | 包装说明: | CHIP CARRIER, R-XBCC-N3 |
Reach Compliance Code: | compliant | 风险等级: | 5.68 |
Is Samacsys: | N | 其他特性: | LOW CONDUCTION LOSS |
雪崩能效等级(Eas): | 86 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 10 A | 最大漏源导通电阻: | 0.013 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -40 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 2.8 W |
最大功率耗散 (Abs): | 89 W | 最大脉冲漏极电流 (IDM): | 228 A |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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