是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | ROHS COMPLIANT, ISOMETRIC-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 13 weeks |
风险等级: | 0.8 | Is Samacsys: | N |
其他特性: | LOW CONDUCTION LOSS | 雪崩能效等级(Eas): | 86 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 10 A |
最大漏源导通电阻: | 0.013 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N3 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -40 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 2.8 W | 最大功率耗散 (Abs): | 89 W |
最大脉冲漏极电流 (IDM): | 228 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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