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IRF6644TRPBF

更新时间： 2024-02-16 14:15:57
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管脉冲瞄准线
页数 文件大小 规格书
10页 255K
描述
DirectFET Power MOSFET

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中文翻译

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IRF6644TRPBF 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：13 weeks
风险等级：0.8Is Samacsys：N
其他特性：LOW CONDUCTION LOSS雪崩能效等级（Eas）：86 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：10 A
最大漏源导通电阻：0.013 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-40 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：N-CHANNEL
功耗环境最大值：2.8 W最大功率耗散 (Abs)：89 W
最大脉冲漏极电流 (IDM)：228 A认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：NO LEAD端子位置：BOTTOM
晶体管元件材料：SILICONBase Number Matches：1

IRF6644TRPBF 数据手册

 浏览型号IRF6644TRPBF的Datasheet PDF文件第2页浏览型号IRF6644TRPBF的Datasheet PDF文件第3页浏览型号IRF6644TRPBF的Datasheet PDF文件第4页浏览型号IRF6644TRPBF的Datasheet PDF文件第5页浏览型号IRF6644TRPBF的Datasheet PDF文件第6页浏览型号IRF6644TRPBF的Datasheet PDF文件第7页 
PD - 97094A  
IRF6644PbF  
IRF6644TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
VDSS  
VGS  
RDS(on)  
10.3mΩ@ 10V  
Vgs(th)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
100V max ±20V max  
Qg tot  
Qgd  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
35nC  
11.5nC  
3.7V  
l Low Conduction Losses  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MN  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SH  
SJ  
SP  
MZ  
MN  
Description  
The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom  
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device  
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability  
improvements, and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
10.3  
8.3  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
60  
82  
DM  
EAS  
IAR  
220  
6.2  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13  
12  
11  
10  
9
0.08  
0.06  
0.04  
0.02  
0.00  
T = 25°C  
A
I
= 6.2A  
D
V
V
= 7.0V  
GS  
= 8.0V  
= 10V  
GS  
V
T
= 125°C  
GS  
J
T
= 25°C  
10  
V
= 15V  
GS  
J
0
4
8
12  
16  
20  
4
6
8
12  
14  
16  
V
, Gate-to-Source Voltage (V)  
GS  
I , Drain Current (A)  
D
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical On-Resistance Vs. Drain Current  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
8/18/06  
1234567...10

中文翻译

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IRF6644TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6644TR1PBF INFINEON

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