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IRF6644

更新时间： 2024-02-07 22:33:44
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 247K
描述
DirectFETPower MOSFET

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IRF6644 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.15雪崩能效等级（Eas）：220 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：10.3 A
最大漏源导通电阻：0.013 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e4
湿度敏感等级：3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：82 A认证状态：Not Qualified
表面贴装：YES端子面层：Silver/Nickel (Ag/Ni)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6644 数据手册

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PD - 96908C  
IRF6644  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l Lead and Bromide Free   
VDSS  
VGS  
RDS(on)  
10.7mΩ@ 10V  
Vgs(th)  
l Low Profile (<0.7 mm)  
100V max ±20V max  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
l Optimized for High Frequency Switching   
Qg tot  
Qgd  
35nC  
11.5nC  
3.7V  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
l Low Conduction Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MN  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
M N  
SQ  
SX  
ST  
MQ  
M X  
MT  
Description  
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications  
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled  
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,  
and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
10.3  
8.3  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
60  
82  
DM  
EAS  
IAR  
220  
6.2  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
14  
13  
12  
11  
10  
0.12  
0.08  
0.04  
0.00  
T = 25°C  
A
I
= 6.2A  
D
V
= 7.0V  
= 8.0V  
GS  
V
GS  
V
= 10V  
= 15V  
GS  
V
GS  
T
= 125°C  
= 25°C  
J
T
J
0
4
8
12  
16  
20  
4.0  
6.0  
V
8.0  
10.0 12.0 14.0 16.0  
, Gate-to-Source Voltage (V)  
GS  
I , Drain Current (A)  
D
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical On-Resistance Vs. Drain Current  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
11/23/04  
1234567...9

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IRF6644 替代型号

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