Datasheet > IRF6643

IRF6643

更新时间： 2023-09-03 20:35:14

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	444K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF6643 数据手册

DIGITAL AUDIO MOSFET

IRF6643TRPbF

Key Parameters

Features

• Latest MOSFET silicon technology

• Key parameters optimized for Class-D audio amplifier

applications

• Low R_DS(on)for improved efficiency

• Low Qg for better THD and improved efficiency

• Low Qrr for better THD and lower EMI

• Low package stray inductance for reduced ringing and lower

EMI

V_DS

150

_DS(ON)typ. @ V_GS= 10V

mΩ

Qg typ.

_G(int)typ.

0.9

• Can deliver up to 200 W per channel into 8Ω load in half-bridge

configuration amplifier

• Dual sided cooling compatible

• Compatible with existing surface mount technologies

• RoHS compliant, halogen-free

DirectFET^®ISOMETRIC

• Lead-free (qualified up to 260°C reflow)

Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest

processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and

internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.

The IRF6643PbF device utilizes DirectFET^®packaging technology. DirectFET^®packaging technology offers lower parasitic

inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI

performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET^®package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET^®package

also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.

These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4800

IRF6643TRPbF

DirectFET Medium Can

IRF6643TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

±20

Units

V_GS

I_D@ T_C= 25°C

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V 

Pulsed Drain Current 

Power Dissipation

6.2

5.0

P_D@T_C= 25°C

P_D@T_A= 25°C

P_D@T_A= 70°C

E_AS

2.8

Power Dissipation 

Single Pulse Avalanche Energy 

Avalanche Current 

1.8

I_AR

7.6

Linear Derating Factor

0.022

-40 to + 150

W/°C

°C

T_J

Operating Junction and

T_STG

Storage Temperature Range

Notes  through  are on page 9

www.irf.com

May 31, 2013

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF6643相关器件

型号	品牌	获取价格	描述	数据表
IRF6643PBF	INFINEON	获取价格	Latest MOSFET silicon technology
IRF6643PBF_15	INFINEON	获取价格	Latest MOSFET silicon technology
IRF6643TRPBF	INFINEON	获取价格	DirectFET Power MOSFET - Typical value (unless otherwise specified)
IRF6644	INFINEON	获取价格	DirectFETPower MOSFET
IRF6644PBF	INFINEON	获取价格	DirectFET Power MOSFET
IRF6644TR1	INFINEON	获取价格	Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon,
IRF6644TR1PBF	INFINEON	获取价格	Ideal for High Performance Isolated Converter Primary Switch Socket
IRF6644TRPBF	INFINEON	获取价格	DirectFET Power MOSFET
IRF6645	INFINEON	获取价格	DirectFET Power MOSFET Typical calues (unless otherwise specified)
IRF66451PBF	INFINEON	获取价格	RoHS Compliant, Halogen-Free

与IRF6643相关文章

解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

16
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

78
REF03GPZ资料解读：主要特征、技术参数、应用场景
2024-08-05

140
一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

188

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF6643

IRF6643 数据手册

与IRF6643相关器件

与IRF6643相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF6643

IRF6643 数据手册

与IRF6643相关器件

与IRF6643相关文章

您还可以找

您在本页遇到什么问题？