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IRF6638TRPBF

更新时间： 2024-01-12 18:39:00
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 267K
描述
DirectFET Power MOSFET

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IRF6638TRPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.19
雪崩能效等级（Eas）：37 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：140 A最大漏极电流 (ID)：25 A
最大漏源导通电阻：0.0029 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：89 W
最大脉冲漏极电流 (IDM)：200 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN SILVER COPPER端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6638TRPBF 数据手册

 浏览型号IRF6638TRPBF的Datasheet PDF文件第2页浏览型号IRF6638TRPBF的Datasheet PDF文件第3页浏览型号IRF6638TRPBF的Datasheet PDF文件第4页浏览型号IRF6638TRPBF的Datasheet PDF文件第5页浏览型号IRF6638TRPBF的Datasheet PDF文件第6页浏览型号IRF6638TRPBF的Datasheet PDF文件第7页 
PD - 97239  
IRF6638PbF  
IRF6638TRPbF  
DirectFET™ Power MOSFET ‚  
l RoHs Compliant   
Typical values (unless otherwise specified)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
2.2mΩ@ 10V 3.0mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l High Cdv/dt Immunity  
30nC  
11nC  
3.2nC  
27nC 18.4nC 1.8V  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6638PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6638PbF has been optimized for parameters that are critical in synchronous buck  
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6638PbF offers particularly low Rds(on) and high Cdv/dt  
immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
25  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
20  
@ TA = 70°C  
@ TC = 25°C  
A
140  
200  
37  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
20  
10  
8
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
= 25A  
I = 20A  
D
D
V
V
V
= 24V  
DS  
= 15V  
DS  
DS  
= 6.0V  
6
4
T
= 125°C  
J
2
T
= 25°C  
J
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16  
0
5
10  
15  
20  
25  
30  
35  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.19mH, RG = 25Ω, IAS = 20A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
07/13/06  
1234567...10

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IRF6638TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6638PBF INFINEON

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