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IRF6641TRPBF

更新时间： 2024-02-10 13:06:29
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
9页 251K
描述
DirectFET TM Power MOSFET

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中文翻译

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IRF6641TRPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：5.31Is Samacsys：N
雪崩能效等级（Eas）：46 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：26 A最大漏极电流 (ID)：4.6 A
最大漏源导通电阻：0.0599 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：89 W最大脉冲漏极电流 (IDM)：37 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6641TRPBF 数据手册

 浏览型号IRF6641TRPBF的Datasheet PDF文件第2页浏览型号IRF6641TRPBF的Datasheet PDF文件第3页浏览型号IRF6641TRPBF的Datasheet PDF文件第4页浏览型号IRF6641TRPBF的Datasheet PDF文件第5页浏览型号IRF6641TRPBF的Datasheet PDF文件第6页浏览型号IRF6641TRPBF的Datasheet PDF文件第7页 
PD - 97262  
IRF6641TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
VDSS  
200V max ±20V max  
VGS  
RDS(on)  
51mΩ@ 10V  
Vgs(th)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
Qg tot  
Qgd  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
34nC  
9.5nC  
4.0V  
l Optimized for Synchronous Rectification  
l Low Conduction Losses  
l High Cdv/dt Immunity  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SH  
SJ  
SP  
MZ  
MN  
Description  
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging  
to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods  
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving  
previous best thermal resistance by 80%.  
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-  
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance  
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal  
for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
200  
±20  
4.6  
3.7  
26  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
37  
DM  
EAS  
IAR  
46  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
11  
200  
180  
160  
140  
120  
100  
12.0  
10.0  
8.0  
I
= 5.5A  
I
= 5.5A  
D
D
V
V
V
= 160V  
= 100V  
= 40V  
DS  
DS  
DS  
T
= 125°C  
= 25°C  
J
6.0  
80  
4.0  
T
J
60  
40  
20  
2.0  
0.0  
0
0
5
10  
15  
20  
25  
30  
35  
40  
4
6
8
10  
12  
14  
16  
Q
, Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 11A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
10/02/06  
1234567...9

中文翻译

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IRF6641TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6641TR1PBF INFINEON

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