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IRF6641PBF_15

更新时间： 2024-02-07 13:02:17
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 447K
描述
Latest MOSFET silicon technology

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IRF6641PBF_15 数据手册

 浏览型号IRF6641PBF_15的Datasheet PDF文件第2页浏览型号IRF6641PBF_15的Datasheet PDF文件第3页浏览型号IRF6641PBF_15的Datasheet PDF文件第4页浏览型号IRF6641PBF_15的Datasheet PDF文件第5页浏览型号IRF6641PBF_15的Datasheet PDF文件第6页浏览型号IRF6641PBF_15的Datasheet PDF文件第7页 
DIGITAL AUDIO MOSFET  
IRF6641TRPbF  
Key Parameters  
Features  
 Latest MOSFET silicon technology  
 Key parameters optimized for Class-D audio amplifier  
applications  
 Low RDS(on) for improved efficiency  
 Low Qg for better THD and improved efficiency  
 Low Qrr for better THD and lower EMI  
 Low package stray inductance for reduced ringing and lower  
EMI  
VDS  
200  
V
R
DS(ON) typ. @ VGS = 10V  
51  
34  
m  
nC  
Qg typ.  
R
G(int) typ.  
1.0  
 Can deliver up to 400 W per channel into 8load in half-bridge  
configuration amplifier  
 Dual sided cooling compatible  
 Compatible with existing surface mount technologies  
 RoHS compliant, halogen-free  
 Lead-free (qualified up to 260°C reflow)  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)  
SQ  
SX  
ST  
SH  
MQ  
MX  
MT  
MN  
MZ  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest  
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and  
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.  
The IRF6641PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic  
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI  
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package  
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.  
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.  
Base part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4800  
IRF6641PbF  
DirectFET Medium Can  
IRF6641TRPbF  
Absolute Maximum Ratings  
Parameter  
Gate-to-Source Voltage  
Max.  
±20  
Units  
V
VGS  
ID @ TC = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V   
Continuous Drain Current, VGS @ 10V   
Pulsed Drain Current   
Power Dissipation  
26  
4.6  
3.7  
A
37  
PD @TC = 25°C  
PD @TA = 25°C  
PD @TA = 70°C  
EAS  
89  
Power Dissipation   
2.8  
1.8  
46  
W
Power Dissipation   
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
A
IAR  
11  
Linear Derating Factor  
0.022  
-40 to + 150  
W/°C  
°C  
TJ  
Operating Junction and  
TSTG  
Storage Temperature Range  
Notes through are on page 9  
1
www.irf.com  
© 2013 International Rectifier  
July 1, 2013  
 
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