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IRF6637TRPBF

更新时间： 2024-02-28 14:29:18
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 265K
描述
Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6637TRPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：5.16雪崩能效等级（Eas）：31 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：59 A
最大漏极电流 (ID)：14 A最大漏源导通电阻：0.0077 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
JESD-609代码：e1湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：89 W
最大脉冲漏极电流 (IDM)：110 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6637TRPBF 数据手册

 浏览型号IRF6637TRPBF的Datasheet PDF文件第2页浏览型号IRF6637TRPBF的Datasheet PDF文件第3页浏览型号IRF6637TRPBF的Datasheet PDF文件第4页浏览型号IRF6637TRPBF的Datasheet PDF文件第5页浏览型号IRF6637TRPBF的Datasheet PDF文件第6页浏览型号IRF6637TRPBF的Datasheet PDF文件第7页 
PD - 97088  
IRF6637PbF  
IRF6637TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
5.7mΩ@ 10V 8.2mΩ@ 4.5V  
30V max ±20V max  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses and Switching Losses  
l Low Profile (<0.7mm)  
11nC  
4.0nC 1.0nC  
20nC  
9.9nC  
1.8V  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including RDS(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
14  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
11  
@ TA = 70°C  
@ TC = 25°C  
A
59  
110  
31  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
11  
25  
20  
15  
10  
5
12  
10  
8
I = 11A  
D
I
= 14A  
V
= 24V  
D
DS  
VDS= 15V  
6
T
= 125°C  
J
4
2
T
= 25°C  
J
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
4
8
12  
16  
20  
24  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Q
Total Gate Charge (nC)  
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.52mH, RG = 25Ω, IAS = 11A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
5/5/06  
1234567...10

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IRF6637TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6637 INFINEON

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