5秒后页面跳转
捷配首页

Datasheet > IRF6637TR1PBF
IRF6637TR1PBF PDF预览

IRF6637TR1PBF

更新时间： 2024-01-16 07:07:47
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 257K
描述
Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

阅读下载

中文翻译

获取价格

IRF6637TR1PBF 数据手册

 浏览型号IRF6637TR1PBF的Datasheet PDF文件第2页浏览型号IRF6637TR1PBF的Datasheet PDF文件第3页浏览型号IRF6637TR1PBF的Datasheet PDF文件第4页浏览型号IRF6637TR1PBF的Datasheet PDF文件第5页浏览型号IRF6637TR1PBF的Datasheet PDF文件第6页浏览型号IRF6637TR1PBF的Datasheet PDF文件第7页 
PD - 96968B  
IRF6637  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l Lead and Bromide Free   
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Low Profile (<0.7 mm)  
5.7mΩ@ 10V 8.2mΩ@ 4.5V  
30V max ±20V max  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
11nC  
4.0nC 1.0nC  
20nC  
9.9nC  
1.8V  
l Optimized for Control FET  
Applications  
l Low Conduction and Switching Losses  
l Compatible with Existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6637 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest  
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing  
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
bus converters including RDS(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
14  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
11  
@ TA = 70°C  
@ TC = 25°C  
A
59  
110  
31  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
11  
25  
20  
15  
10  
5
12  
10  
8
I = 11A  
D
I
= 14A  
V
= 24V  
D
DS  
VDS= 15V  
6
T
= 125°C  
J
4
2
T
= 25°C  
J
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
4
8
12  
16  
20  
24  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Q
Total Gate Charge (nC)  
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.52mH, RG = 25Ω, IAS = 11A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
4/17/06  
1234567...10

中文翻译

下载PDF

IRF6637TR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6637TR1 INFINEON

类似代替

 DirectFETPower MOSFET
IRF6637TRPBF INFINEON

功能相似

 Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Me

与IRF6637TR1PBF相关器件

型号 品牌 获取价格 描述 数据表
IRF6637TRPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Me
IRF6638PBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6638TRPBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6641PBF INFINEON

获取价格

 		Latest MOSFET silicon technology
IRF6641PBF_15 INFINEON

获取价格

 		Latest MOSFET silicon technology
IRF6641TR1PBF INFINEON

获取价格

 		DirectFET TM MOSFET
IRF6641TRPBF INFINEON

获取价格

 		DirectFET TM Power MOSFET
IRF6641TRPBF_07 INFINEON

获取价格

 		DirectFET TM Power MOSFET
IRF6643 INFINEON

获取价格

 		The StrongIRFET™ power MOSFET family is optim
IRF6643PBF INFINEON

获取价格

 		Latest MOSFET silicon technology

与IRF6637TR1PBF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证