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IRF6637TR1

更新时间： 2024-02-21 07:50:06
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 263K
描述
DirectFETPower MOSFET

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IRF6637TR1 数据手册

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PD - 96968  
IRF6637  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l Lead and Bromide Free   
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Low Profile (<0.7 mm)  
5.7mΩ@ 10V 8.2mΩ@ 4.5V  
30V max ±20V max  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
11nC  
4.0nC 1.0nC  
20nC  
9.9nC  
1.8V  
l Optimized for both Sync.FET and some Control FET  
application  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
14  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
11  
@ TA = 70°C  
@ TC = 25°C  
A
59  
110  
31  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
11  
25  
20  
15  
10  
5
12  
10  
8
I = 11A  
D
I
= 14A  
V
= 24V  
D
DS  
VDS= 15V  
6
T
= 125°C  
J
4
2
T
= 25°C  
J
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
4
8
12  
16  
20  
24  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Q
Total Gate Charge (nC)  
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.52mH, RG = 25Ω, IAS = 11A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
2/15/05  
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IRF6637TR1 替代型号

型号 品牌 替代类型 描述 数据表
IRF6637TR1PBF INFINEON

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