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IRF6633

更新时间： 2024-02-05 17:44:53
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 264K
描述
DirectFET Power MOSFET

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IRF6633 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.31
雪崩能效等级（Eas）：41 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：59 A最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.0056 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：89 W
最大脉冲漏极电流 (IDM)：132 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN SILVER COPPER端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6633 数据手册

 浏览型号IRF6633的Datasheet PDF文件第2页浏览型号IRF6633的Datasheet PDF文件第3页浏览型号IRF6633的Datasheet PDF文件第4页浏览型号IRF6633的Datasheet PDF文件第5页浏览型号IRF6633的Datasheet PDF文件第6页浏览型号IRF6633的Datasheet PDF文件第7页 
PD - 96989  
IRF6633  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
20V max ±20V max  
4.1mΩ@ 10V 7.0mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
11nC  
4.0nC 1.2nC  
32nC  
8.8nC  
1.8V  
l Optimized for both Sync.FET and some Control FET  
application  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
20  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
16  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
13  
@ TA = 70°C  
@ TC = 25°C  
A
59  
132  
41  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13  
20  
15  
10  
5
12  
10  
8
I = 13A  
D
V
= 16V  
I
= 16A  
DS  
VDS= 10V  
D
6
T
= 125°C  
= 25°C  
J
4
2
T
J
0
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
4
8
12  
16  
20  
24  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Q
Total Gate Charge (nC)  
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.51mH, RG = 25Ω, IAS = 13A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
6/2/05  
1234567...9

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