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IRF6635PBF PDF预览

IRF6635PBF

更新时间： 2024-02-01 19:08:41
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 243K
描述
DirectFET Power MOSFET

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中文翻译

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IRF6635PBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：7.04
雪崩能效等级（Eas）：200 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：180 A最大漏极电流 (ID)：32 A
最大漏源导通电阻：0.0018 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：89 W
最大脉冲漏极电流 (IDM)：250 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6635PBF 数据手册

 浏览型号IRF6635PBF的Datasheet PDF文件第2页浏览型号IRF6635PBF的Datasheet PDF文件第3页浏览型号IRF6635PBF的Datasheet PDF文件第4页浏览型号IRF6635PBF的Datasheet PDF文件第5页浏览型号IRF6635PBF的Datasheet PDF文件第6页浏览型号IRF6635PBF的Datasheet PDF文件第7页 
PD - 97086  
IRF6635PbF  
IRF6635TRPbF  
DirectFET™ Power MOSFET ‚  
l RoHs Compliant   
Typical values (unless otherwise specified)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
1.3mΩ@ 10V 1.8mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l High Cdv/dt Immunity  
47nC  
17nC  
4.7nC  
48nC  
29nC  
1.8V  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-  
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and  
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing  
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,  
improving previous best thermal resistance by 80%.  
The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package  
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/  
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The  
IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
32  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
25  
A
@ TA = 70°C  
@ TC = 25°C  
180  
250  
200  
25  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
8
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 25A  
D
I
= 32A  
V
= 24V  
= 15V  
D
DS  
V
DS  
6
4
T
= 125°C  
J
2
T
3
= 25°C  
4
J
0
0
1
2
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
60  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage  
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.63mH, RG = 25Ω, IAS = 25A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
5/3/06  
1234567...9

中文翻译

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IRF6635PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6727MTRPBF INFINEON

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IRF6635TRPBF INFINEON

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IRF6635 INFINEON

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