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IRF6636TRPBF PDF预览

IRF6636TRPBF

更新时间： 2024-01-30 09:08:07
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 280K
描述
Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6636TRPBF 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：0.84Is Samacsys：N
雪崩能效等级（Eas）：28 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：18 A最大漏源导通电阻：0.0045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：140 A
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6636TRPBF 数据手册

 浏览型号IRF6636TRPBF的Datasheet PDF文件第2页浏览型号IRF6636TRPBF的Datasheet PDF文件第3页浏览型号IRF6636TRPBF的Datasheet PDF文件第4页浏览型号IRF6636TRPBF的Datasheet PDF文件第5页浏览型号IRF6636TRPBF的Datasheet PDF文件第6页浏览型号IRF6636TRPBF的Datasheet PDF文件第7页 
PD - 97219  
IRF6636PbF  
IRF6636TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant   
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
VGS  
RDS(on)  
RDS(on)  
20V max ±20V max  
3.2mΩ@ 10V 4.6mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l High Cdv/dt Immunity  
18nC  
6.1nC 1.9nC 7.3nC  
10nC  
1.8V  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
ST  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
20  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
18  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
15  
@ TA = 70°C  
@ TC = 25°C  
A
81  
140  
28  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
14  
20  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 14A  
I
= 18A  
D
D
V
V
= 16V  
= 10V  
DS  
DS  
T
= 125°C  
J
T
= 25°C  
J
0
0
1
2
3
4
5
6
7
8
9
10  
0
10  
20  
30  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
05/29/06  
1234567...10

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IRF6636TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6636PBF INFINEON

功能相似

 Ideal for CPU Core DC-DC Converters
IRF6636 INFINEON

功能相似

 Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce

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