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IRF6631TR1

更新时间： 2024-10-02 21:15:19
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 236K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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IRF6631TR1 数据手册

 浏览型号IRF6631TR1的Datasheet PDF文件第2页浏览型号IRF6631TR1的Datasheet PDF文件第3页浏览型号IRF6631TR1的Datasheet PDF文件第4页浏览型号IRF6631TR1的Datasheet PDF文件第5页浏览型号IRF6631TR1的Datasheet PDF文件第6页浏览型号IRF6631TR1的Datasheet PDF文件第7页 
PD - 97183  
IRF6631  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS compliant containing no lead or bromide   
l Low Profile (<0.6 mm)  
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
6.0mΩ@ 10V 8.3mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Ultra Low Package Inductance  
12nC  
4.4nC 1.1nC  
10nC  
7.3nC  
1.8V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET applications   
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
SQ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and  
gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
13  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
10  
A
@ TA = 70°C  
@ TC = 25°C  
57  
100  
13  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
20  
15  
10  
5
12.0  
10.0  
8.0  
I
= 13A  
I = 10A  
D
D
V
= 24V  
DS  
DS  
V
= 15V  
T
= 125°C  
J
6.0  
4.0  
2.0  
T
= 25°C  
7
J
0
0.0  
3
4
5
6
8
9
10  
0
5
10  
15  
20  
25  
30  
Q Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 10A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
02/09/06  
1234567...9

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