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IRF6631PBF_15

更新时间： 2024-02-04 01:56:32
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 253K
描述
Low Switching and Conduction Losses

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IRF6631PBF_15 数据手册

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PD - 97217  
IRF6631PbF  
IRF6631TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant   
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
6.0mΩ@ 10V 8.3mΩ@ 4.5V  
l Ideal for CPU Core DC-DC Converters  
l Low Switching and Conduction Losses  
l Low Profile (<0.7mm)  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
12nC  
4.4nC 1.1nC  
10nC  
7.3nC  
1.8V  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
SQ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to  
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-  
ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that  
are critical in synchronous buck converter’s CtrlFET sockets.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
13  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
10  
A
@ TA = 70°C  
@ TC = 25°C  
57  
100  
13  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
20  
15  
10  
5
12.0  
10.0  
8.0  
I
= 13A  
I = 10A  
D
D
V
= 24V  
DS  
DS  
V
= 15V  
T
= 125°C  
J
6.0  
4.0  
2.0  
T
= 25°C  
7
J
0
0.0  
3
4
5
6
8
9
10  
0
5
10  
15  
20  
25  
30  
Q Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 10A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
05/29/06  
1234567...10

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