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IRF6620

更新时间： 2024-09-29 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 180K
描述
HEXFETPower MOSFET

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中文翻译

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IRF6620 数据手册

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PD - 95823A  
IRF6620  
HEXFET® Power MOSFET  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
RDS(on) max  
Qg(typ.)  
2.7mΩ@VGS = 10V  
3.6mΩ@VGS = 4.5V  
20V  
28nC  
l Low Switching Losses  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Compatible with Existing Surface Mount  
Techniques  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high  
Cdv/dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VDS  
20  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
±20  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
150  
I
I
I
I
@ TC = 25°C  
D
D
D
27  
@ TA = 25°C  
@ TA = 70°C  
A
22  
220  
DM  
2.8  
P
P
P
@TA = 25°C  
@TA = 70°C  
@TC = 25°C  
Power Dissipation  
D
D
D
1.8  
Power Dissipation  
W
89  
39  
Power Dissipation  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
22  
0.017  
Linear Derating Factor  
W/°C  
°C  
-40 to + 150  
T
T
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Case  
–––  
–––  
1.4  
RθJA  
°C/W  
RθJC  
–––  
1.0  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through ˆare on page 2  
www.irf.com  
1
4/2/04  
12345678

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IRF6620 替代型号

型号 品牌 替代类型 描述 数据表
IRF6620TRPBF INFINEON

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