5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRF6621PbF
IRF6621PbF PDF预览

IRF6621PbF

更新时间： 2024-01-29 02:48:29
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
10页 266K
描述
DirectFETPower MOSFET 

阅读下载

中文翻译

获取价格

IRF6621PbF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：ROHS COMPLIANT, ISOMETRIC-2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.18
雪崩能效等级（Eas）：13 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.0091 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N2
JESD-609代码：e4湿度敏感等级：3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：96 A
认证状态：Not Qualified表面贴装：YES
端子面层：Silver/Nickel (Ag/Ni)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6621PbF 数据手册

 浏览型号IRF6621PbF的Datasheet PDF文件第2页浏览型号IRF6621PbF的Datasheet PDF文件第3页浏览型号IRF6621PbF的Datasheet PDF文件第4页浏览型号IRF6621PbF的Datasheet PDF文件第5页浏览型号IRF6621PbF的Datasheet PDF文件第6页浏览型号IRF6621PbF的Datasheet PDF文件第7页 
PD - 97093  
IRF6621PbF  
IRF6621TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
7.0mΩ@ 10V 9.3mΩ@ 4.5V  
30V max ±20V max  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses and Switching Losses  
l Low Profile (<0.7mm)  
11.7nC 4.2nC 1.0nC  
10nC  
6.9nC  
1.8V  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
SQ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6621PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6621PbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
12  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
9.6  
55  
@ TA = 70°C  
@ TC = 25°C  
A
96  
DM  
EAS  
IAR  
13  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
9.6  
25  
20  
15  
10  
5
12  
10  
8
I = 9.6A  
D
V
= 24V  
I
= 12A  
DS  
D
VDS= 15V  
6
T
= 125°C  
J
4
2
T
= 25°C  
J
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
4
8
12  
16  
20  
24  
28  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Q
Total Gate Charge (nC)  
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 9.6A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
5/24/06  
1234567...10

中文翻译

下载PDF

IRF6621PbF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6621TRPbF INFINEON

功能相似

 DirectFETPower MOSFET 
IRF6621 INFINEON

功能相似

 The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced D

与IRF6621PbF相关器件

型号 品牌 获取价格 描述 数据表
IRF6621TR1 INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Me
IRF6621TR1PBF INFINEON

获取价格

 		DirectFETPower MOSFET 
IRF6621TRPbF INFINEON

获取价格

 		DirectFETPower MOSFET 
IRF6622 INFINEON

获取价格

 		Power MOSFET
IRF6622PBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6622TRPBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6623 INFINEON

获取价格

 		HEXFET Power MOSFET
IRF6623PBF INFINEON

获取价格

 		DirectFETPower MOSFET
IRF6623PBF_15 INFINEON

获取价格

 		Ideal for CPU Core DC-DC Converters
IRF6623TR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me

与IRF6621PbF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证