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IRF6622PBF PDF预览

IRF6622PBF

更新时间： 2024-01-10 01:24:09
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 242K
描述
DirectFET Power MOSFET

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IRF6622PBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.15
雪崩能效等级（Eas）：13 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (Abs) (ID)：59 A最大漏极电流 (ID)：15 A
最大漏源导通电阻：0.0063 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：34 W
最大脉冲漏极电流 (IDM)：120 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6622PBF 数据手册

 浏览型号IRF6622PBF的Datasheet PDF文件第2页浏览型号IRF6622PBF的Datasheet PDF文件第3页浏览型号IRF6622PBF的Datasheet PDF文件第4页浏览型号IRF6622PBF的Datasheet PDF文件第5页浏览型号IRF6622PBF的Datasheet PDF文件第6页浏览型号IRF6622PBF的Datasheet PDF文件第7页 
PD - 97244  
IRF6622PbF  
IRF6622TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant   
VDSS  
25V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
4.9mΩ@ 10V 6.8mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
11nC  
3.8nC 1.6nC 7.1nC 7.7nC  
1.8V  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
SQ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to  
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-  
ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that  
are critical in synchronous buck converter’s ControlFET sockets.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
15  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
12  
@ TA = 70°C  
@ TC = 25°C  
A
59  
120  
13  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
12  
20  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 12A  
V
V
V
= 20V  
= 13V  
= 5.0V  
D
I
= 15A  
DS  
DS  
DS  
D
T
= 125°C  
J
T
= 25°C  
J
0
3
4
5
6
7
8
9
10  
0
2
4
6
8
10  
12  
14  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
07/18/06  
1234567...9

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