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IRF6620PBF

更新时间： 2024-09-30 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 180K
描述
Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6620PBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
其他特性：LOW CONDUCTION LOSS雪崩能效等级（Eas）：39 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：150 A
最大漏极电流 (ID)：27 A最大漏源导通电阻：0.0027 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：89 W
最大脉冲漏极电流 (IDM)：220 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6620PBF 数据手册

 浏览型号IRF6620PBF的Datasheet PDF文件第2页浏览型号IRF6620PBF的Datasheet PDF文件第3页浏览型号IRF6620PBF的Datasheet PDF文件第4页浏览型号IRF6620PBF的Datasheet PDF文件第5页浏览型号IRF6620PBF的Datasheet PDF文件第6页浏览型号IRF6620PBF的Datasheet PDF文件第7页 
PD - 95823A  
IRF6620  
HEXFET® Power MOSFET  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
RDS(on) max  
Qg(typ.)  
2.7mΩ@VGS = 10V  
3.6mΩ@VGS = 4.5V  
20V  
28nC  
l Low Switching Losses  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Compatible with Existing Surface Mount  
Techniques  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high  
Cdv/dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VDS  
20  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
±20  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
150  
I
I
I
I
@ TC = 25°C  
D
D
D
27  
@ TA = 25°C  
@ TA = 70°C  
A
22  
220  
DM  
2.8  
P
P
P
@TA = 25°C  
@TA = 70°C  
@TC = 25°C  
Power Dissipation  
D
D
D
1.8  
Power Dissipation  
W
89  
39  
Power Dissipation  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
22  
0.017  
Linear Derating Factor  
W/°C  
°C  
-40 to + 150  
T
T
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Case  
–––  
–––  
1.4  
RθJA  
°C/W  
RθJC  
–––  
1.0  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through ˆare on page 2  
www.irf.com  
1
4/2/04  
12345678

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