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IRF6619 PDF预览

IRF6619

更新时间： 2024-02-22 03:32:36
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 290K
描述
DirectFET Power MOSFET

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中文翻译

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IRF6619 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：ROHS COMPLIANT, ISOMETRIC-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.19
雪崩能效等级（Eas）：240 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：150 A最大漏极电流 (ID)：30 A
最大漏源导通电阻：0.0022 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e4
湿度敏感等级：3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：89 W最大脉冲漏极电流 (IDM)：240 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Silver/Nickel (Ag/Ni)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6619 数据手册

 浏览型号IRF6619的Datasheet PDF文件第2页浏览型号IRF6619的Datasheet PDF文件第3页浏览型号IRF6619的Datasheet PDF文件第4页浏览型号IRF6619的Datasheet PDF文件第5页浏览型号IRF6619的Datasheet PDF文件第6页浏览型号IRF6619的Datasheet PDF文件第7页 
PD - 96917  
IRF6619  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Dual Sided Cooling Compatible   
1.65mΩ@ 10V 2.2mΩ@ 4.5V  
20V max ±20V max  
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching above 1MHz   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction Losses  
38nC  
13nC  
3.5nC  
18nC  
22nC  
2.0V  
l Compatible with existing Surface Mount Techniques   
MX  
DirectFET™ ISOMETRIC  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high  
Cdv/dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VDS  
20  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
±20  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
30  
I
I
I
I
@ TA = 25°C  
D
D
D
24  
@ TA = 70°C  
@ TC = 25°C  
A
(Package Limited)  
150  
240  
240  
Pulsed Drain Current  
DM  
Single Pulse Avalanche Energy  
Avalanche Current  
EAS (Thermally limited)  
mJ  
A
IAR  
See Fig. 14, 15, 17a, 17b,  
Repetitive Avalanche Energy  
EAR  
mJ  
12  
6.0  
I = 16A  
D
V
= 16V  
I
= 30A  
DS  
VDS= 10V  
D
10  
8
5.0  
4.0  
3.0  
2.0  
6
T
= 125°C  
J
4
2
T
= 25°C  
J
1.0  
2.0  
0
4.0  
6.0  
8.0  
10.0  
0
20  
40  
60  
80  
100  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Q
Total Gate Charge (nC)  
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS  
24A, VGS =10V. Part not recommended for use above this value.  
† Surface mounted on 1 in. square Cu board, steady state.  
=
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Repetitive rating; pulse width limited by max. junction temperature.  
‰ TC measured with thermocouple mounted to top (Drain) of part.  
www.irf.com  
1
2/10/05  
1234567...9

中文翻译

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IRF6619 替代型号

型号 品牌 替代类型 描述 数据表
IRF6619TRPBF INFINEON

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IRF6619PBF INFINEON

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