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IRF6619TRPBF PDF预览

IRF6619TRPBF

更新时间： 2024-09-30 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 291K
描述
DirectFET Power MOSFET

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中文翻译

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IRF6619TRPBF 数据手册

 浏览型号IRF6619TRPBF的Datasheet PDF文件第2页浏览型号IRF6619TRPBF的Datasheet PDF文件第3页浏览型号IRF6619TRPBF的Datasheet PDF文件第4页浏览型号IRF6619TRPBF的Datasheet PDF文件第5页浏览型号IRF6619TRPBF的Datasheet PDF文件第6页浏览型号IRF6619TRPBF的Datasheet PDF文件第7页 
PD - 97084  
IRF6619PbF  
IRF6619TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
1.65mΩ@ 10V 2.2mΩ@ 4.5V  
20V max ±20V max  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
38nC  
13nC  
3.5nC  
18nC  
22nC  
2.0V  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6619PbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619PbF offers particu-  
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VDS  
20  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
±20  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
30  
I
I
I
I
@ TA = 25°C  
D
D
D
24  
@ TA = 70°C  
@ TC = 25°C  
A
(Package Limited)  
150  
240  
240  
Pulsed Drain Current  
DM  
Single Pulse Avalanche Energy  
Avalanche Current  
EAS (Thermally limited)  
mJ  
A
IAR  
See Fig. 14, 15, 17a, 17b,  
Repetitive Avalanche Energy  
EAR  
mJ  
12  
6.0  
I = 16A  
D
V
= 16V  
I
= 30A  
DS  
VDS= 10V  
D
10  
8
5.0  
4.0  
3.0  
2.0  
6
T
= 125°C  
J
4
2
T
= 25°C  
J
1.0  
2.0  
0
4.0  
6.0  
8.0  
10.0  
0
20  
40  
60  
80  
100  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Q
Total Gate Charge (nC)  
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS  
24A, VGS =10V. Part not recommended for use above this value.  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
=
www.irf.com  
1
5/3/06  
1234567...10

中文翻译

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IRF6619TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6619 INFINEON

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IRF6619PBF INFINEON

功能相似

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