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IRF6616TR1PBF

更新时间： 2024-01-19 16:14:28
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 265K
描述
Power Field-Effect Transistor, 19A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6616TR1PBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：ROHS COMPLIANT, ISOMETRIC-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.17
雪崩能效等级（Eas）：36 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (ID)：19 A最大漏源导通电阻：0.005 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
JESD-609代码：e4湿度敏感等级：3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：150 A
认证状态：Not Qualified表面贴装：YES
端子面层：Silver/Nickel (Ag/Ni)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6616TR1PBF 数据手册

 浏览型号IRF6616TR1PBF的Datasheet PDF文件第2页浏览型号IRF6616TR1PBF的Datasheet PDF文件第3页浏览型号IRF6616TR1PBF的Datasheet PDF文件第4页浏览型号IRF6616TR1PBF的Datasheet PDF文件第5页浏览型号IRF6616TR1PBF的Datasheet PDF文件第6页浏览型号IRF6616TR1PBF的Datasheet PDF文件第7页 
PD - 96999B  
IRF6616  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS compliant containing no lead or bormide   
l Low Profile (<0.7 mm)  
VDSS  
40V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
3.7mΩ@ 10V 4.6mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Ultra Low Package Inductance  
29nC  
9.4nC 2.4nC  
33nC  
15nC  
1.8V  
l Optimized for High Frequency Switching   
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low  
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package  
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET  
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be  
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.  
Absolute Maximum Ratings  
Max.  
40  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
19  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
15  
@ TA = 70°C  
@ TC = 25°C  
A
106  
150  
36  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
15  
6
5
4
3
2
1
0
12  
10  
I = 15A  
D
I
= 19A  
D
V
= 32V  
DS  
VDS= 20V  
8.0  
6.0  
4.0  
2.0  
0
T
= 125°C  
J
T
= 25°C  
8.0  
J
0
10  
20  
30  
40  
2.0  
4.0  
6.0  
10.0  
Q
Total Gate Charge (nC)  
V
, Gate-to-Source Voltage (V)  
G
GS  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS =15A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
11/16/05  
1234567...10

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IRF6616TR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6616TRPBF INFINEON

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