Datasheet > IRF6617TR1PBF

IRF6617TR1PBF

更新时间： 2024-09-30 19:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
9页	215K
描述
Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6617TR1PBF 数据手册

PD -95847B

IRF6617

DirectFET Power MOSFET

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

V_DSS

30V

R_DS(on)max

Qg(typ.)

8.1m

Ω@V_GS= 10V

11nC

l Low Switching Losses

10.3mΩ@V_GS= 4.5V

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with Existing Surface Mount Techniques

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)

Description

The IRF6617 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET^TMpackaging to

achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-

ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-

ing previous best thermal resistance by 80%.

The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are

critical in synchronous buck converters including R_DS(on)and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

±20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_A= 25°C

@ T_A= 70°C

120

@T_C= 25°C

@T_A= 25°C

@T_A= 70°C

Power Dissipation

2.1

1.4

Power Dissipation

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

0.017

-40 to + 150

Linear Derating Factor

W/°C

°C

Operating Junction and

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

Max.

Units

R_θJA

Junction-to-Ambient

Junction-to-Case

R_θJA

–––

3.0

R_θJA

°C/W

R_θJC

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

–––

Notes through are on page 2

www.irf.com

11/3/05

12 3 4 5 6 7...9

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IRF6617TR1PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF6617TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Me

与IRF6617TR1PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF6617TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Me
IRF6618	INFINEON	获取价格	HEXFET Power MOSFET
IRF6618PBF	INFINEON	获取价格	DirectFET?Power MOSFET ?
IRF6618TR1	INFINEON	获取价格	Power MOSFET
IRF6618TR1PBF	INFINEON	获取价格	Lead-Free (Qualified up to 260Â°C Reflow)
IRF6618TRPBF	INFINEON	获取价格	DirectFET?Power MOSFET ?
IRF6619	INFINEON	获取价格	DirectFET Power MOSFET
IRF6619PBF	INFINEON	获取价格	DirectFET Power MOSFET
IRF6619TRPBF	INFINEON	获取价格	DirectFET Power MOSFET
IRF661TRPBF	INFINEON	获取价格	RoHs Compliant

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