IRF6618TR1

更新时间： 2024-09-29 22:25:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	231K
描述
Power MOSFET

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中文翻译

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数据手册

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IRF6618TR1 数据手册

PD - 95822A

IRF6609

HEXFET^®Power MOSFET

V_DSS

20V

R_DS(on)max

2.0mΩ@V_GS= 10V

2.6mΩ@V_GS= 4.5V

46nC

l Low Conduction Losses

l Low Switching Losses

l Ideal Synchronous Rectifier MOSFET

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount

Techniques

DirectFETISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

SQ SX ST MQ MX MT

Description

The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation

of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck

operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers

particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

±20

150

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_A= 25°C

@ T_A= 70°C

250

2.8

1.8

Power Dissipation

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.022

-40 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Ambient

Typ.

–––

12.5

Max.

Units

R_θJA

–––

1.4

Junction-to-Ambient

Junction-to-Case

R_θJA

°C/W

R_θJC

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

–––

Notes through are on page 10

www.irf.com

1 _11/10/04

12 3 4 5 6 7...10

中文翻译

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与IRF6618TR1相关器件

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IRF6619TRPBF	INFINEON	获取价格	DirectFET Power MOSFET
IRF661TRPBF	INFINEON	获取价格	RoHs Compliant
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IRF6620PBF	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Me
IRF6620TR1	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Me
IRF6620TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Me

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