IRF6617TR1

更新时间： 2024-09-29 22:36:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	170K
描述
HEXFET Power MOSFET

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中文翻译

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IRF6617TR1 数据手册

PD - 95847

IRF6617

HEXFET^®Power MOSFET

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

V_DSS

30V

R_DS(on)max

Qg(typ.)

8.1m

Ω@V_GS= 10V

11nC

l Low Switching Losses

10.3mΩ@V_GS= 4.5V

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with Existing Surface Mount Techniques

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)

Description

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to

achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and

vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-

turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, IMPROVING previous best thermal resistance by 80%.

The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are

critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_A= 25°C

@ T_A= 70°C

120

2.1

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

1.4

Power Dissipation

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

0.017

Linear Derating Factor

W/°C

°C

-40 to + 150

Operating Junction and

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

Max.

Units

R_θ

Junction-to-Ambient

Junction-to-Case

–––

3.0

°C/W

–––

1.0

Junction-to-PCB Mounted

–––

J-PCB

Notes through are on page 2

www.irf.com

3/12/04

12 3 4 5 6 7 8

中文翻译

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与IRF6617TR1相关器件

型号	品牌	获取价格	描述	数据表
IRF6617TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Me
IRF6617TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Me
IRF6618	INFINEON	获取价格	HEXFET Power MOSFET
IRF6618PBF	INFINEON	获取价格	DirectFET?Power MOSFET ?
IRF6618TR1	INFINEON	获取价格	Power MOSFET
IRF6618TR1PBF	INFINEON	获取价格	Lead-Free (Qualified up to 260Â°C Reflow)
IRF6618TRPBF	INFINEON	获取价格	DirectFET?Power MOSFET ?
IRF6619	INFINEON	获取价格	DirectFET Power MOSFET
IRF6619PBF	INFINEON	获取价格	DirectFET Power MOSFET
IRF6619TRPBF	INFINEON	获取价格	DirectFET Power MOSFET

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