是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | CHIP CARRIER, R-XBCC-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.2 | 雪崩能效等级(Eas): | 37 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 24 A |
最大漏源导通电阻: | 0.0033 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N3 | JESD-609代码: | e4 |
湿度敏感等级: | 3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 190 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Silver/Nickel (Ag/Ni) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6612TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6612TRPBF | INFINEON |
获取价格 |
RoHs Compliant | |
IRF6613 | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF6613PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6613TR1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6613TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6613TRPBF | INFINEON |
获取价格 |
Benchmark MOSFETs Product Selection Guide | |
IRF6614 | INFINEON |
获取价格 |
DirectFET Power MOSFET | |
IRF6614PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, | |
IRF6614TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, |