是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | ROHS COMPLIANT, ISOMETRIC-2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.19 | 雪崩能效等级(Eas): | 36 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 19 A |
最大漏源导通电阻: | 0.005 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XDSO-G2 | JESD-609代码: | e4 |
湿度敏感等级: | 3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 150 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Silver/Nickel (Ag/Ni) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6616PBF_15 | INFINEON |
获取价格 |
RoHS compliant containing no lead or bormide | |
IRF6616TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Met | |
IRF6616TRPBF | INFINEON |
获取价格 |
Benchmark MOSFETs Product Selection Guide | |
IRF6617 | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF6617PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6617TR1 | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF6617TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6617TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6618 | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF6618PBF | INFINEON |
获取价格 |
DirectFET?Power MOSFET ? |