是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-XBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
其他特性: | LOW CONDUCTION LOSS | 雪崩能效等级(Eas): | 200 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 23 A |
最大漏极电流 (ID): | 23 A | 最大漏源导通电阻: | 0.0034 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XBCC-N3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 89 W | 最大脉冲漏极电流 (IDM): | 180 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | TIN SILVER COPPER |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6613TR1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6613TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me | |
IRF6613TRPBF | INFINEON |
获取价格 |
Benchmark MOSFETs Product Selection Guide | |
IRF6614 | INFINEON |
获取价格 |
DirectFET Power MOSFET | |
IRF6614PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, | |
IRF6614TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, | |
IRF6614TRPBF | INFINEON |
获取价格 |
Benchmark MOSFETs Product Selection Guide | |
IRF6616 | INFINEON |
获取价格 |
DirectFET Power MOSFET | |
IRF6616PBF | INFINEON |
获取价格 |
RoHS compliant containing no lead or bormide | |
IRF6616PBF_15 | INFINEON |
获取价格 |
RoHS compliant containing no lead or bormide |