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IRF6613TR1 PDF预览

IRF6613TR1

更新时间： 2024-01-22 21:46:39
品牌 Logo 应用领域
英飞凌 - INFINEON 瞄准线开关脉冲晶体管
页数 文件大小 规格书
9页 234K
描述
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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IRF6613TR1 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：ROHS COMPLIANT, ISOMETRIC-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.15其他特性：LOW CONDUCTION LOSS
雪崩能效等级（Eas）：200 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：23 A最大漏极电流 (ID)：23 A
最大漏源导通电阻：0.0034 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e4
湿度敏感等级：3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：89 W最大脉冲漏极电流 (IDM)：180 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Silver/Nickel (Ag/Ni)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6613TR1 数据手册

 浏览型号IRF6613TR1的Datasheet PDF文件第2页浏览型号IRF6613TR1的Datasheet PDF文件第3页浏览型号IRF6613TR1的Datasheet PDF文件第4页浏览型号IRF6613TR1的Datasheet PDF文件第5页浏览型号IRF6613TR1的Datasheet PDF文件第6页浏览型号IRF6613TR1的Datasheet PDF文件第7页 
PD - 95881B  
IRF6613  
HEXFET® Power MOSFET  
l Application Specific MOSFETs  
l Ideal for Synchronous Rectification in Isolated  
DC-DC Converters  
VDSS  
40V  
RDS(on) max  
3.4mΩ@VGS = 10V  
4.1mΩ@VGS = 4.5V  
Qg(typ.)  
42nC  
l Low Conduction Losses  
l Low Switching Losses  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Compatible with existing Surface Mount Techniques  
DirectFET™ ISOMETRIC  
MT  
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including  
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-  
nous FET applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VDS  
40  
Drain-to-Source Voltage  
V
±20  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
150  
I
I
I
I
@ TC = 25°C  
D
D
D
23  
@ TA = 25°C  
@ TA = 70°C  
A
18  
180  
DM  
89  
P
P
P
@TC = 25°C  
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
D
D
D
2.8  
Power Dissipation  
1.8  
Power Dissipation  
W
mJ  
A
EAS  
IAR  
200  
Single Pulse Avalanche Energy  
Avalanche Current  
18  
0.022  
-40 to + 150  
Linear Derating Factor  
W/°C  
°C  
T
T
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Case  
RθJA  
–––  
–––  
1.4  
RθJA  
°C/W  
RθJC  
–––  
1.0  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through ˆare on page 2  
www.irf.com  
1
9/30/05  
1234567...9

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