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IRF6614

更新时间： 2024-09-27 22:31:31
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英飞凌 - INFINEON /
页数 文件大小 规格书
9页 256K
描述
DirectFET Power MOSFET

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IRF6614 数据手册

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PD -96907A  
IRF6614  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l Application Specific MOSFETs  
l Lead and Bromide Free   
VDSS  
VGS  
RDS(on)  
RDS(on)  
5.9mΩ@ 10V 7.1mΩ@ 4.5V  
40V max ±20V max  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
l Optimized for High Frequency Switching above 1MHz   
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
19nC  
6.0nC 1.4nC 5.5nC 9.5nC  
1.8V  
l Ideal for CPU Core and Telecom Synchronous  
Rectification in DC-DC Converters  
l Optimized for Control FET socket of Sync. Buck Converter  
l Low Conduction Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
ST  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.  
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal  
resistance by 80%.  
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-  
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous  
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
40  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
12.7  
10.1  
55  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
102  
22  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10.2  
12  
10  
8
20  
16  
12  
8
I = 10.2A  
D
V
= 32V  
I
= 12.7A  
DS  
VDS= 20V  
D
6
T
T
= 125°C  
= 25°C  
J
4
J
2
4
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
10  
Q
20  
30  
40  
50  
V
, Gate-to-Source Voltage (V)  
GS  
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET MOSFETs  
ƒ Repetitive rating; pulse width limited by max. junction temperature.  
„ Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 10.2A.  
† Surface mounted on 1 in. square Cu board, steady state.  
‰ TC measured with thermocouple mounted to top (Drain) of part.  
www.irf.com  
1
11/8/04  
1234567...9

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IRF6614 替代型号

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